20N65D Datasheet. Specs and Replacement
Type Designator: 20N65D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 74.7 nS
Cossⓘ - Output Capacitance: 316 pF
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20N65D substitution
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20N65D datasheet
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SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 650V Trench and Super Junction IGBT SI*120N65G2P2D Rev. 0.9 Nov. 2023 www.supersemi.com.cn SIW120N65G2P2D 650V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 650 V designed according to the super junction (SJ) IC 120 A technology. The SJ-IGBT series provides low VCE(sa... See More ⇒
spc20n65g.pdf
SPC20N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=20A(Vgs=10V) R max. at 25oC ( ) V =10V 0.40 DS(on) GS Ultra Low Gate Charge Q max. (nC) 95 g Improved dv/dt Capability Q (nC) 28 gs 100% Avalanche Tested Q (nC) 30 gd RoHS compliant Configuration single ... See More ⇒
smirf20n65.pdf
SMIRF20N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 20A IRF20N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.5 (VGS=10V, ID=10A) on-state resistance, provide superior s... See More ⇒
vbzmb20n65s.pdf
VBZMB20N65S www.VBsemi.com N-Channel 650-V (D-S) Super Junction MOSFET FEATURES PRODUCT SUMMARY Reduced trr, Qrr, and IRRM VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg RDS(on) max. ( ) at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss) Qg max. (nC) 106 Low switching losses due to reduced Qrr Qgs (nC) 14 Ultra low gate charge (Qg) Qgd (nC) 33 ... See More ⇒
vbzmb20n65.pdf
VBZMB20N65 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 1.1 Reduced switching and conduction losses Qg max. (nC) 25 Ultra low gate charge (Qg) Qgs (nC) 2.0 Avalanche energy rated (UIS) Qgd (nC) 2.7 Configura... See More ⇒
dgw20n65ctl.pdf
RoHS DGW20N65CTL COMPLIANT IGBT Modules IGBT Descrete V 650 V CE I 20 A C V I =20A 1.9 V CE(SAT) C Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature ... See More ⇒
tma20n65h tmp20n65h.pdf
TMA20N65H, TMP20N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA20N65H TO-220F A2... See More ⇒
tma20n65hg tmw20n65hg.pdf
TMA20N65HG,TMW20N65HG Wuxi Unigroup Microelectronics Co.,Ltd 650V N-Channel MOSFET Description 650V N-Channel MOSFET VDMOSFET is a double-diffusion device which the current flows is vertically, and is a voltage-controlled device. Under the control of the appropriate gate voltage, the semiconductor surface is inverted, forming a conductive channel and an appropriate amount of curre... See More ⇒
hmg20n65f.pdf
HMG20N65F IGBT Features 650V 20A,V = 1.70 V@20A CE(sat)(typ.) Field Stop IGBT Technology. 10 s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Benefits High Efficiency for Motor Control. Rugged Performance. Excellent Current Sharing in Parallel Operation Absolute Maxinmun Ratings Symbol Parameter Val... See More ⇒
hm20n65f.pdf
V General Description VDSS 650 ID 20 A HM20N65F, the silicon N-channel Enhanced PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati... See More ⇒
md20n65.pdf
Silicon N-Channel Power MOSFET Description MD20N65,the silicon N-channel Enhanced MOSFETs,is obtained by advanced MOSFET technology which reduce the conduction loss improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS V =650V, R ... See More ⇒
mpbq120n65gsf.pdf
MPBQ120N65GSF 650V-120A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor drives positive temperature coefficient in VCEsat Main inverter Low VCEsat fast switching PTC heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution Type Marking Package Code MPBQ120... See More ⇒
mpbp20n65ef mpba20n65ef mpbc20n65ef mpbw20n65ef mpbt20n65ef.pdf
MPBX20N65EF 650V-20A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor Drives positive temperature coefficient in VCEsat Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code MPBP20N65EF MP20N65EF TO-220 MPBA20N65EF MP20N65EF TO-220F MPBC20N6... See More ⇒
mpva20n65f mpvp20n65f.pdf
MPVX20N65F Series Power MOSFET MPSW60M041 FEATURES APPLICATIONS l BVDSS 650V, ID=20A l Switch Mode Power Supply (SMPS) l RDS(on) 0.48 (Max) @VGS=10V l Uninterruptible Power Supply (UPS) l Very Low FOM (RDS(on) *Qg) l Power Factor Correction (PFC) l Excellent stability and uniformity l AC to DC Converters D G TO-220F S TO-220 Ordering Information Type NO. Marking Package ... See More ⇒
ygf20n65t2 ygk20n65t2 ygp20n65t2 ygw20n65t2.pdf
YGF20N65T2,YGK20N65T2 YGP20N65T2,YGW20N65T2 650V /20A Trench Field Stop IGBT Features Max Junction Temperature 175 C V 650 V CE High breakdown voltage up to 650V for improved reliability I 20 A C Short Circuit Rated V I =20A 1.65 V CE(SAT) C Very Low Saturation Voltage V = 1.65V (Typ.) @ I = 20A CE(SAT) C Soft current turn-off waveforms App... See More ⇒
spa20n65c3.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPA20N65C3 FEATURES With TO-220F packaging New revolutionary high voltage technology Ultra low gate charge High peak current capability Improved transconductance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
spp20n65c3.pdf
isc N-Channel MOSFET Transistor SPP20N65C3 ISPP20N65C3 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
stp20n65m5.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP20N65M5 FEATURES Typical R (on)=0.16 DS Excellent switching performance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V ... See More ⇒
20n65nf.pdf
20N65NF 20 Amps,650 Volts N-CHANNEL MOSFET FEATURE TO-220NF 20A,650V,R =0.50 @V =10V/10A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT 20N65NF Drain-Source Voltage V 650 DSS V Gate-Source Voltage V 30 GSS Contin... See More ⇒
ap20n65f ap20n65p.pdf
AP20N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP20N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. ... See More ⇒
Detailed specifications: DH0159D, DH0159E, DH0159F, DH0159I, DH019N04, DH019N04B, DH019N04D, DH019N04E, 20N50, 23N50D, 5N65C, 60N10B, 60N10D, 60N10E, 60N10F, 60N10I, AOB413
Keywords - 20N65D MOSFET specs
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