DH020N03 PDF and Equivalents Search

 

DH020N03 Specs and Replacement

Type Designator: DH020N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 787 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: TO220

DH020N03 substitution

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DH020N03 datasheet

 ..1. Size:1166K  cn wxdh
 dh020n03 dh020n03f dh020n03i dh020n03e dh020n03b dh020n03d.pdf pdf_icon

DH020N03

DH020N03/DH020N03F/DH020N03I/ DH020N03E/DH020N03B/DH020N03D 200A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2.0m DS(on) (TYP) standard. 1 3 S I = 200A D 2 Features Low on res... See More ⇒

 0.1. Size:704K  cn wxdh
 dh020n03p.pdf pdf_icon

DH020N03

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Detailed specifications: DH012N03D, DH012N03E, DH012N03F, DH012N03I, DH012N03P, DH012N03U, DH019N04F, DH019N04I, K2611, DH020N03B, DH020N03D, DH020N03E, B25N10, B2N65, B4N60, B4N65, B4N80

Keywords - DH020N03 MOSFET specs

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