B4N65 PDF and Equivalents Search

 ..1. Size:1235K  cn wxdh
 b4n65.pdf

B4N65 4A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 4.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) = 2.0 2 Features Fast switching ESD impro... See More ⇒

 0.1. Size:1095K  samwin
 swf4n65da swn4n65da swd4n65da swnb4n65da.pdf

SW4N65DA N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 TO-251NX-S4 ID 4A High ruggedness Low RDS(ON) (Typ 3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charger, Adaptor, 3 3 3 LED, TV-Pow... See More ⇒

 0.2. Size:1049K  samwin
 swf4n65d swn4n65d swsi4n65d swmi4n65d swui4n65d swd4n65d sws4n65d swb4n65d swp4n65d swmqi4n65d.pdf

SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2 )@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) 2 3 2 3 3 3 3 Improved dv/d... See More ⇒

 0.3. Size:1065K  cn vbsemi
 vbzmb4n65.pdf

VBZMB4N65 www.VBsemi.com N-Channel (D-S) Power MOSFET 650V FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 2.5 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 1... See More ⇒