2SK3159 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3159
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 280 nS
Cossⓘ - Output Capacitance: 1650 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO3P
2SK3159 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3159 Datasheet (PDF)
2sk3159.pdf
2SK3159 Silicon N Channel MOS FET High Speed Power Switching REJ03G1084-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS = 23 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. Gate2. DrainG(Flange)3. Source12S3Rev.4.00 May 15, 2
2sk3159.pdf
isc N-Channel MOSFET Transistor 2SK3159FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
rej03g1084 2sk3159ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk315.pdf
Ordering number:EN1005BN-Channel Junction Silicon FET2SK315FM Tuner ApplicationsFeatures Package Dimensions Ideal for FM tuners in radios, stereos, etc.unit:mm Because it is compactly packaged, sets can be made2040Acompact.[2SK315] Small Crss (Crss=0.08pF typ). 2.24.0 High yfs (yfs=12.0ms typ).0.40.50.40.41 2 31 : Drain1.3 1.32 : Source3 :
2sk3156.pdf
2SK3156 Silicon N Channel MOS FET High Speed Power Switching REJ03G1081-0301 (Previous: ADE-208-683A) Rev.3.01 Apr 27, 2006 Features Low on-resistance RDS =50 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain(Flange)3. Source1
2sk3155.pdf
2SK3155 Silicon N Channel MOS FET High Speed Power Switching REJ03G1080-0500 (Previous: ADE-208-768C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS = 100 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S2
rej03g1075 2sk3150lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3158.pdf
2SK3158 Silicon N Channel MOS FET High Speed Power Switching REJ03G1083-0400 (Previous: ADE-208-757B) Target Specification Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain
rej03g1083 2sk3158ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3151.pdf
2SK3151 Silicon N Channel MOS FET High Speed Power Switching REJ03G1076-0400 (Previous: ADE-208-747B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 11.5 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain(Flange)3. Sour
2sk3152.pdf
2SK3152 Silicon N Channel MOS FET High Speed Power Switching REJ03G1077-0200 (Previous: ADE-208-732) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS =100 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23
rej03g1080 2sk3155ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1077 2sk3152ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3153.pdf
2SK3153 Silicon N Channel MOS FET High Speed Power Switching REJ03G1078-0300 (Previous: ADE-208-733A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =65 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23
rej03g1082 2sk3157ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3157.pdf
2SK3157 Silicon N Channel MOS FET High Speed Power Switching REJ03G1082-0300 (Previous: ADE-208-769A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS = 50 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23
rej03g1078 2sk3153ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3150.pdf
2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1075-0400 (Previous: ADE-208-750B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =45 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L)
2sk3154.pdf
2SK3154 Silicon N Channel MOS FET High Speed Power Switching REJ03G1079-0300 (Previous: ADE-208-682A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =100 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain(Flange)3. Source
rej03g1076 2sk3151ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3156.pdf
isc N-Channel MOSFET Transistor 2SK3156FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3155.pdf
isc N-Channel MOSFET Transistor 2SK3155FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3150l.pdf
isc N-Channel MOSFET Transistor 2SK3150LFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3158.pdf
isc N-Channel MOSFET Transistor 2SK3158FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3151.pdf
isc N-Channel MOSFET Transistor 2SK3151FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 15m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3150s.pdf
isc N-Channel MOSFET Transistor 2SK3150SFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3152.pdf
isc N-Channel MOSFET Transistor 2SK3152FEATURES Drain-source on-resistance:RDS(on) 130m@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 120 V
2sk3153.pdf
isc N-Channel MOSFET Transistor 2SK3153FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V =120V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3157.pdf
isc N-Channel MOSFET Transistor 2SK3157FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3154.pdf
isc N-Channel MOSFET Transistor 2SK3154FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: 2SK3151 , 2SK3152 , 2SK3153 , 2SK3154 , 2SK3155 , 2SK3156 , 2SK3157 , 2SK3158 , IRFB3306 , 2SK3160 , 2SK3161 , 2SK3162 , 2SK3163 , 2SK3177 , 2SK3203 , 2SK3209 , 2SK3210 .
