All MOSFET. B5N65 Datasheet

 

B5N65 Datasheet and Replacement


   Type Designator: B5N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.8 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO251
 

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B5N65 Datasheet (PDF)

 ..1. Size:1207K  cn wxdh
b5n65.pdf pdf_icon

B5N65

B5N655A 650V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 650Vplanar technology which reduce the conduction loss, improve switchingI = 5.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)= 1.92 Features Fast switching ESD impro

 0.1. Size:103K  international rectifier
irfib5n65a.pdf pdf_icon

B5N65

PD-91816BSMPS MOSFETIRFIB5N65AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 5.1A High Speed Power Switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacita

 0.2. Size:235K  international rectifier
irfib5n65apbf.pdf pdf_icon

B5N65

PD-94837SMPS MOSFETIRFIB5N65APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 650V 0.93 5.1Al High Speed Power Switchingl High Voltage Isolation = 2.5KVRMSl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt RuggednessG D S

 0.3. Size:143K  vishay
sihfib5n65a.pdf pdf_icon

B5N65

IRFIB5N65A, SiHFIB5N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 0.93RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19

Datasheet: DH020N03E , B25N10 , B2N65 , B4N60 , B4N65 , B4N80 , B50N06 , B5N50 , IRF3205 , B630 , B640 , B740 , B7N70 , B80N06 , DATD063N06N , DATP057N06N , DH009N02 .

History: PSA06N70

Keywords - B5N65 MOSFET datasheet

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