All MOSFET. DH009N02 Datasheet

 

DH009N02 Datasheet and Replacement


   Type Designator: DH009N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 220 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 196 nC
   tr ⓘ - Rise Time: 123 nS
   Cossⓘ - Output Capacitance: 1386 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
   Package: PPAK5X6-8
 

 DH009N02 substitution

   - MOSFET ⓘ Cross-Reference Search

 

DH009N02 Datasheet (PDF)

 ..1. Size:1219K  cn wxdh
 dh009n02 dh009n02f dh009n02i dh009n02e dh009n02b dh009n02d.pdf pdf_icon

DH009N02

DH009N02/DH009N02F/DH009N02IDH009N02E/DH009N02B/DH009N02D310A 20V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 20VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.35mDS(on) (TYP)standard.13 SI = 310AD2 Features Low on res

 0.1. Size:778K  cn wxdh
 dh009n02p.pdf pdf_icon

DH009N02

DH009N02P220A 20V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 20VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1mDS(on) (TYP)standard.13 SI = 220AD2 Features Low on resistance Low gate charge Fast switching L

Datasheet: B5N65 , B630 , B640 , B740 , B7N70 , B80N06 , DATD063N06N , DATP057N06N , IRFZ44 , DH009N02B , DH009N02D , DH009N02E , DH009N02F , DH009N02I , DH009N02P , DH012N03 , DH012N03B .

History: NCEP4075AGU

Keywords - DH009N02 MOSFET datasheet

 DH009N02 cross reference
 DH009N02 equivalent finder
 DH009N02 lookup
 DH009N02 substitution
 DH009N02 replacement

 

 
Back to Top

 


 
.