All MOSFET. DH009N02D Datasheet

 

DH009N02D Datasheet and Replacement


   Type Designator: DH009N02D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 310 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 196 nC
   trⓘ - Rise Time: 123 nS
   Cossⓘ - Output Capacitance: 1386 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: TO252
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DH009N02D Datasheet (PDF)

 ..1. Size:1219K  cn wxdh
 dh009n02 dh009n02f dh009n02i dh009n02e dh009n02b dh009n02d.pdf pdf_icon

DH009N02D

DH009N02/DH009N02F/DH009N02IDH009N02E/DH009N02B/DH009N02D310A 20V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 20VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.35mDS(on) (TYP)standard.13 SI = 310AD2 Features Low on res

 6.1. Size:778K  cn wxdh
 dh009n02p.pdf pdf_icon

DH009N02D

DH009N02P220A 20V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 20VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1mDS(on) (TYP)standard.13 SI = 220AD2 Features Low on resistance Low gate charge Fast switching L

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History: DH009N02 | DATD063N06N | DH009N02F

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