DH009N02F Datasheet and Replacement
Type Designator: DH009N02F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 310 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 196 nC
trⓘ - Rise Time: 123 nS
Cossⓘ - Output Capacitance: 1386 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: TO220F
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DH009N02F Datasheet (PDF)
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DH009N02/DH009N02F/DH009N02IDH009N02E/DH009N02B/DH009N02D310A 20V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 20VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.35mDS(on) (TYP)standard.13 SI = 310AD2 Features Low on res
dh009n02p.pdf
DH009N02P220A 20V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 20VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1mDS(on) (TYP)standard.13 SI = 220AD2 Features Low on resistance Low gate charge Fast switching L
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