DCC016M120G2 Datasheet and Replacement
Type Designator: DCC016M120G2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 207 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO247
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DCC016M120G2 Datasheet (PDF)
dcc016m120g2 dccf016m120g2.pdf

DCC016M120G2/DCCF016M120G2 120A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequ
dcc016m120g3.pdf

DCC016M120G31200V/16m/110A SiC MOSFETFeatures Key ParametersVDS Higher System Efficiency 1200VRDS(on)typ Reduced Cooling Requirements 16mID 175 operating temperature 110A Increased Power Density Vth 2.5V Increased System Switching FrequencyApplications Solar and UPS inverters Power Supplies High Voltage DC/DC Converters Switch Mode
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: 2SJ473-01S | IRF7759L2TR1PBF
Keywords - DCC016M120G2 MOSFET datasheet
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History: 2SJ473-01S | IRF7759L2TR1PBF



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