All MOSFET. DCC160M120G1 Datasheet

 

DCC160M120G1 Datasheet and Replacement


   Type Designator: DCC160M120G1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.196 Ohm
   Package: TO247
 

 DCC160M120G1 substitution

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DCC160M120G1 Datasheet (PDF)

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DCC160M120G1

DCC160M120G1DCCF160M120G1 18A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Freq

Datasheet: DCC016M120G2 , DCC016M120G3 , DCC020M65G2 , DCC030M120G2 , DCC040M65G2 , DCC060M65G2 , DCC075M120G2C , DCC080M120A , 18N50 , DCCF016M120G2 , DCCF016M120G3 , DCCF020M65G2 , DH100P40D , DH100P40E , DH100P40F , DH100P40I , DH100P70 .

History: TPB65R600M | NCEP25N10AK

Keywords - DCC160M120G1 MOSFET datasheet

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