DCC160M120G1 Specs and Replacement

Type Designator: DCC160M120G1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.196 Ohm

Package: TO247

DCC160M120G1 substitution

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DCC160M120G1 datasheet

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 dcc160m120g1 dccf160m120g1.pdf pdf_icon

DCC160M120G1

DCC160M120G1 DCCF160M120G1 18A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Freq... See More ⇒

Detailed specifications: DCC016M120G2, DCC016M120G3, DCC020M65G2, DCC030M120G2, DCC040M65G2, DCC060M65G2, DCC075M120G2C, DCC080M120A, STP80NF70, DCCF016M120G2, DCCF016M120G3, DCCF020M65G2, DH100P40D, DH100P40E, DH100P40F, DH100P40I, DH100P70

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