DH105N07 Datasheet and Replacement
Type Designator: DH105N07
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 174 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO220
DH105N07 substitution
DH105N07 Datasheet (PDF)
dh105n07 dh105n07f dh105n07i dh105n07e dh105n07b dh105n07d.pdf

DH105N07/DH105N07F/DH105N07I/DH105N07E/DH105N07B/DH105N07D60A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10.5mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resi
dh105n07p.pdf

DH105N07P56A 70V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 70VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10mDS(on) (TYP)standard.13 SI = 56AD2 Features Low on resistance Low gate charge Fast switching
Datasheet: DH100P40D , DH100P40E , DH100P40F , DH100P40I , DH100P70 , DH100P70E , DH100P70F , DH100P70I , IRFZ46N , DH105N07B , DH105N07D , DH105N07E , DH105N07F , DH105N07I , DH105N07P , DH4N150B , DH4N150F .
History: 2SK3530-01MR | TSF10N65M | 6604 | IRF6633A | 2SK2527-01MR | IXTH1N200P3HV | PMZB420UN
Keywords - DH105N07 MOSFET datasheet
DH105N07 cross reference
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DH105N07 replacement
History: 2SK3530-01MR | TSF10N65M | 6604 | IRF6633A | 2SK2527-01MR | IXTH1N200P3HV | PMZB420UN



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