DH105N07D Datasheet and Replacement
Type Designator: DH105N07D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 174 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO252
DH105N07D substitution
DH105N07D Datasheet (PDF)
dh105n07 dh105n07f dh105n07i dh105n07e dh105n07b dh105n07d.pdf

DH105N07/DH105N07F/DH105N07I/DH105N07E/DH105N07B/DH105N07D60A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10.5mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resi
dh105n07p.pdf

DH105N07P56A 70V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 70VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10mDS(on) (TYP)standard.13 SI = 56AD2 Features Low on resistance Low gate charge Fast switching
Datasheet: DH100P40F , DH100P40I , DH100P70 , DH100P70E , DH100P70F , DH100P70I , DH105N07 , DH105N07B , 75N75 , DH105N07E , DH105N07F , DH105N07I , DH105N07P , DH4N150B , DH4N150F , DH500P06R , DH50N06FZC .
History: 2N60G-AA3-R | 2SK1012-01 | TPCA8128 | 2SK2167 | HGA040N06SL | IPT012N06N | JFPC8N60C
Keywords - DH105N07D MOSFET datasheet
DH105N07D cross reference
DH105N07D equivalent finder
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DH105N07D substitution
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History: 2N60G-AA3-R | 2SK1012-01 | TPCA8128 | 2SK2167 | HGA040N06SL | IPT012N06N | JFPC8N60C



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