DH105N07I Specs and Replacement

Type Designator: DH105N07I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 174 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO262

DH105N07I substitution

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DH105N07I datasheet

 ..1. Size:1152K  cn wxdh
 dh105n07 dh105n07f dh105n07i dh105n07e dh105n07b dh105n07d.pdf pdf_icon

DH105N07I

DH105N07/DH105N07F/DH105N07I/ DH105N07E/DH105N07B/DH105N07D 60A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 10.5m DS(on) (TYP) standard. 1 3 S I = 60A D 2 Features Low on resi... See More ⇒

 6.1. Size:737K  cn wxdh
 dh105n07p.pdf pdf_icon

DH105N07I

DH105N07P 56A 70V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 70V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 10m DS(on) (TYP) standard. 1 3 S I = 56A D 2 Features Low on resistance Low gate charge Fast switching ... See More ⇒

Detailed specifications: DH100P70E, DH100P70F, DH100P70I, DH105N07, DH105N07B, DH105N07D, DH105N07E, DH105N07F, IRF2807, DH105N07P, DH4N150B, DH4N150F, DH500P06R, DH50N06FZC, DH50N15, DH60N06, DH8004

Keywords - DH105N07I MOSFET specs

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