All MOSFET. FQD5N15 Datasheet

 

FQD5N15 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD5N15

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 4.3 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO252

FQD5N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD5N15 Datasheet (PDF)

1.1. fqd5n15.pdf Size:840K _fairchild_semi

FQD5N15
FQD5N15

November 2013 FQD5N15 N-Channel QFET® MOSFET 150 V, 4.3 A, 800 mΩ Description Features This N-Channel enhancement mode power MOSFET is • 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary ID = 2.15 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 5.4 nC) MOSFET technology has been especially tai

5.1. fqd5n60c fqu5n60c.pdf Size:636K _fairchild_semi

FQD5N15
FQD5N15

October 2008 QFET FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

5.2. fqd5n30 fqu5n30.pdf Size:757K _fairchild_semi

FQD5N15
FQD5N15

May 2000 TM QFET QFET QFET QFET FQD5N30 / FQU5N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.4A, 300V, RDS(on) = 0.9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been espec

5.3. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi

FQD5N15
FQD5N15

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been esp

5.4. fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi

FQD5N15
FQD5N15

October 2008 QFET FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored t

5.5. fqu5n40 fqd5n40.pdf Size:735K _fairchild_semi

FQD5N15
FQD5N15

April 2000 TM QFET QFET QFET QFET FQD5N40 / FQU5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been espe

5.6. fqd5n50c fqu5n50c.pdf Size:664K _fairchild_semi

FQD5N15
FQD5N15

October 2008 QFET FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to

5.7. fqd5n50c.pdf Size:664K _fairchild_semi

FQD5N15
FQD5N15

October 2008 QFET® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially

Datasheet: FDD16AN08_F085 , FQPF7P20 , FQPF85N06 , FQPF8N60C , FDD24AN06L_F085 , FQPF8N60CF , FDMS7680 , FQPF8N80C , TPC8107 , FQPF8N90C , FQPF9N25C , FQPF9N50CF , FQPF9N90C , FQPF9P25 , FQS4900 , FCI25N60N , FQS4901 .

 


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