DH8004B Specs and Replacement
Type Designator: DH8004B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 1030 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO247
DH8004B substitution
- MOSFET ⓘ Cross-Reference Search
DH8004B datasheet
dh8004 dhi8004 dhe8004 dh8004d dh8004b.pdf
DH8004/DHI8004/DHE8004/ DH8004D/DH8004B 180A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS V = 80V DSS standard. G R = 2.8m DS(on) (Type) 1 2 Features 3 S I = 180A D Fast switching Low on resi... See More ⇒
Detailed specifications: DH105N07P, DH4N150B, DH4N150F, DH500P06R, DH50N06FZC, DH50N15, DH60N06, DH8004, STP65NF06, DH8004D, DH80N08B22, DH8290, DH850N10, DH850N10B, DH850N10D, DH850N10E, DH850N10F
Keywords - DH8004B MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: NCEP60T20LL | NCEP60T15AG | NCEP60T12K
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