DH150N12D Datasheet and Replacement
Type Designator: DH150N12D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 105 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
DH150N12D substitution
DH150N12D Datasheet (PDF)
dh150n12 dh150n12f dh150n12i dh150n12e dh150n12b dh150n12d.pdf

DH150N12/DH150N12F/DH150N12IDH150N12E/DH150N12B/DH150N12D50A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 15.0mDS(on) (TYP)standard.13 SI = 50AD2 Features Low on res
Datasheet: DH8290 , DH850N10 , DH850N10B , DH850N10D , DH850N10E , DH850N10F , DH150N12 , DH150N12B , 2SK3918 , DH150N12E , DH150N12F , DH150N12I , DH160P03V , DH160P04D , DH16N06 , DH170P04V , DH1K1N10 .
History: DMNH6021SK3 | IRF7452QPBF | 2SK3575 | PJA3406 | AOTF292L | IPW65R280C6
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History: DMNH6021SK3 | IRF7452QPBF | 2SK3575 | PJA3406 | AOTF292L | IPW65R280C6



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