All MOSFET. DH1K1N10B Datasheet

 

DH1K1N10B Datasheet and Replacement


   Type Designator: DH1K1N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19.7 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO251
 

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DH1K1N10B Datasheet (PDF)

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DH1K1N10B

DH1K1N10/DH1K1N10F/DH1K1N10IDH1K1N10E/DH1K1N10B/DH1K1N10D12A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 112mDS(on) (TYP)standard.13 SID =12A2 Features Low on resista

Datasheet: DH150N12E , DH150N12F , DH150N12I , DH160P03V , DH160P04D , DH16N06 , DH170P04V , DH1K1N10 , IRFZ44N , DH1K1N10D , DH1K1N10E , DH1K1N10F , DH1K1N10I , DH300N08 , DH300N08B , DH300N08D , DH300N08E .

History: VSD050P10MS | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | MTP4411AQ8 | AP60SL650AFI

Keywords - DH1K1N10B MOSFET datasheet

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