DH1K1N10B Specs and Replacement

Type Designator: DH1K1N10B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.7 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO251

DH1K1N10B substitution

- MOSFET ⓘ Cross-Reference Search

 

DH1K1N10B datasheet

 ..1. Size:1154K  cn wxdh
 dh1k1n10 dh1k1n10f dh1k1n10i dh1k1n10e dh1k1n10b dh1k1n10d.pdf pdf_icon

DH1K1N10B

DH1K1N10/DH1K1N10F/DH1K1N10I DH1K1N10E/DH1K1N10B/DH1K1N10D 12A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 112m DS(on) (TYP) standard. 1 3 S ID =12A 2 Features Low on resista... See More ⇒

Detailed specifications: DH150N12E, DH150N12F, DH150N12I, DH160P03V, DH160P04D, DH16N06, DH170P04V, DH1K1N10, IRFZ44N, DH1K1N10D, DH1K1N10E, DH1K1N10F, DH1K1N10I, DH300N08, DH300N08B, DH300N08D, DH300N08E

Keywords - DH1K1N10B MOSFET specs

 DH1K1N10B cross reference

 DH1K1N10B equivalent finder

 DH1K1N10B pdf lookup

 DH1K1N10B substitution

 DH1K1N10B replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.