DH300N08 Datasheet and Replacement
Type Designator: DH300N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 78 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TO220
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DH300N08 Datasheet (PDF)
dh300n08 dh300n08f dh300n08i dh300n08e dh300n08b dh300n08d.pdf

DH300N08/DH300N08F/DH300N08I/DH300N08E/DH300N08B/DH300N08D19A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 30mDS(on) (TYP)standard.13 SI = 19AD2 Features Low on resista
dh300p06l.pdf

DH300P06L-50A -60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV = -60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 22mDS(on) (TYP)standard.I = -50AD2 Features Low on resistance Low gate charge Fast switching Low reverse
dh300p06 dh300p06f dh300p06i dh300p06e dh300p06b dh300p06d.pdf

DH300P06/DH300P06F/DH300P06IDH300P06E/DH300P06B/DH300P06D30A 60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -60VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR =28mDS(on) (TYP)RoHS standard.I = -30AD2 Features Fast switching Low on resist
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CHM85A3PAGP | TK7P65W | SFFX054Z
Keywords - DH300N08 MOSFET datasheet
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History: CHM85A3PAGP | TK7P65W | SFFX054Z



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