DH100N03B13 PDF and Equivalents Search

 

DH100N03B13 PDF Specs and Replacement


   Type Designator: DH100N03B13
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 325 nS
   Cossⓘ - Output Capacitance: 426 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO220
 

 DH100N03B13 substitution

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DH100N03B13 PDF Specs

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DH100N03B13

DH100N03B13/DHF100N03B13/DHI100N03B13/ DHE100N03B13/DHB100N03B13/DHD100N03B13 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.3m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Featur... See More ⇒

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DH100N03B13

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 9.1. Size:1193K  china
dh100p30.pdf pdf_icon

DH100N03B13

DH100P30/DH100P30F/DH100P30I/ DH100P30E/DH100P30B/DH100P30D 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used V -100V DSS = advanced trench technology and design, provide to excellent R with low gate charge. Which accords R DSON DS(on) TYP) =35m with the RoHS standard. I = -30A D 2 Features Fast Switching Low ON... See More ⇒

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DH100N03B13

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Detailed specifications: DH300P06B , DH300P06D , DH300P06E , DH300P06F , DH300P06I , DH300P06L , DH3205A , DH3N90 , AON6414A , DH100N06 , DH100P18 , DH100P18B , DH100P18D , DH100P18E , DH100P18F , DH100P18I , DH100P18V .

Keywords - DH100N03B13 MOSFET specs

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