DH100N03B13 Datasheet and Replacement

DH100N03B13/DHF100N03B13/DHI100N03B13/DHE100N03B13/DHB100N03B13/DHD100N03B13100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.3mDS(on) (TYP)standard.13 SI = 100AD2 Featur

DH100N06112A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.5mDS(on) (TYP)standard.13 SI = 112AD2 Features Low on resistance Low gate charge Fast switching

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON

DH100P40D40A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, usedV = -100VDSSadvanced trench technology and design, provide toexcellent Rdson with low gate charge. Which accordsR =31mDS(on) (TYP)with the RoHS standard.I = -40AD2 Features Fast switching Low on gate charge Low reverse Transfer capacitances

DH100P30A/DH100P30AF/DH100P30AIDH100P30AE/DH100P30AB/DH100P30AD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 47mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r

DH100P40/DH100P40F/DH100P40I/DH100P40E40A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedVDSS = -100Vadvanced trench technology and design, provide toexcellent Rdson with low gate charge. Which accordsRDS =31m(on) (TYP)with the RoHS standard.ID = -40A2 Features Fast Switching Low ON Resistance Low Gate Ch

DH100P30D -100V/33m/-35A P-MOSFET Features Key ParametersVDS Low on resistance -100VRDS(on)typ. Low reverse transfer capacitances 33mID 100% single pulse avalanche energy test -35ACiss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nCApplications Load switch TO-252Marking & Packing InformationPart # Package

DH100P25/DH100P25F/DH100P25I/DH100P25E/DH100P25B/DH100P25D25A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =72mwith the RoHS standard.I = -25AD2 Features Fast Switching Low ON

DH100P28/DH100P28F/DH100P28IDH100P28E/DH100P28B/DH100P28D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 47mDS(on) (TYP)standard.13 SID =-30A2 Features Low on resista

DH100P18V-6A -100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV =-100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 160mDS(on) (TYP)standard.I = -6AD2 Features Low on resistance Low gate charge Fast switching Low reverse

DH100P18DH100P18F/DH100P18IDH100P18E/DH100P18B/DH100P18D13A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV =-100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 165mDS(on) (TYP)standard.I = -13AD2 Features Low on resistance Low

DH100P30C/DH100P30CF/DH100P30CIDH100P30CE/DH100P30CB/DH100P30CD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 40mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r

DH100P70/DH100P70F/DH100P70I/DH100P70E80A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedVDSS = -100Vtrench technology and design, provide to excellentRdson with low gate charge. Which accords with theRDS =22m(on) (TYP)RoHS standard.ID = -80A2 Features Fast switching Low on resistance Low gate ch

DH100P35/DH100P35F/DH100P35I/DH100P35E/DH100P35B/DH100P35D35A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedVDSS = -100Vadvanced trench technology and design, provide toexcellent Rdson with low gate charge. Which accordsRDS =37m(on) (TYP)with the RoHS standard.ID = -35A2 Features Fast Switching Low ON Resista