All MOSFET. DH100P18I Equivalents Search

DH100P18DH100P18F/DH100P18I DH100P18E/DH100P18B/DH100P18D 13A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used V =-100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 165m DS(on) (TYP) standard. I = -13A D 2 Features Low on resistance Low ... See More ⇒

DH100P18V -6A -100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used V =-100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 160m DS(on) (TYP) standard. I = -6A D 2 Features Low on resistance Low gate charge Fast switching Low reverse ... See More ⇒

DH100P30/DH100P30F/DH100P30I/ DH100P30E/DH100P30B/DH100P30D 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used V -100V DSS = advanced trench technology and design, provide to excellent R with low gate charge. Which accords R DSON DS(on) TYP) =35m with the RoHS standard. I = -30A D 2 Features Fast Switching Low ON... See More ⇒

... See More ⇒

DH100P30A/DH100P30AF/DH100P30AI DH100P30AE/DH100P30AB/DH100P30AD 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 47m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on r... See More ⇒

DH100P40/DH100P40F/ DH100P40I/DH100P40E 40A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used VDSS = -100V advanced trench technology and design, provide to excellent Rdson with low gate charge. Which accords RDS =31m (on) (TYP) with the RoHS standard. ID = -40A 2 Features Fast Switching Low ON Resistance Low Gate Ch... See More ⇒

DH100P30D -100V/33m /-35A P-MOSFET Features Key Parameters VDS Low on resistance -100V RDS(on)typ. Low reverse transfer capacitances 33m ID 100% single pulse avalanche energy test -35A Ciss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nC Applications Load switch TO-252 Marking & Packing Information Part # Package ... See More ⇒

DH100P25/DH100P25F/DH100P25I/ DH100P25E/DH100P25B/DH100P25D 25A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used V -100V DSS = advanced trench technology and design, provide to excellent R with low gate charge. Which accords R DSON DS(on) TYP) =72m with the RoHS standard. I = -25A D 2 Features Fast Switching Low ON... See More ⇒

DH100P28/DH100P28F/DH100P28I DH100P28E/DH100P28B/DH100P28D 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 47m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on resista... See More ⇒

DH100P30C/DH100P30CF/DH100P30CI DH100P30CE/DH100P30CB/DH100P30CD 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 40m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on r... See More ⇒

DH100P70/DH100P70F/ DH100P70I/DH100P70E 80A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used advanced VDSS = -100V trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the RDS =22m (on) (TYP) RoHS standard. ID = -80A 2 Features Fast switching Low on resistance Low gate ch... See More ⇒

DH100P35/DH100P35F/DH100P35I/ DH100P35E/DH100P35B/DH100P35D 35A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used VDSS = -100V advanced trench technology and design, provide to excellent Rdson with low gate charge. Which accords RDS =37m (on) (TYP) with the RoHS standard. ID = -35A 2 Features Fast Switching Low ON Resista... See More ⇒