DH140N10D Datasheet and Replacement
Type Designator: DH140N10D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 126 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO252
DH140N10D substitution
DH140N10D Datasheet (PDF)
dh140n10b dh140n10d.pdf

DH140N10B&DH140N10D68A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 11.0mDS(on) (TYP)standard.13 SI = 68AD2 Features Low on resistance Low gate charge Fast s
Datasheet: DH025N04E , DH025N04F , DH025N04I , HY1708MF-VB , PK6H6BA , QN3103M6N , DH135N10P , DH140N10B , IRFZ24N , DH240N06L , DH240N06LB , DH240N06LD , DH240N06LE , DH240N06LF , DH240N06LI , DH400P06 , DH400P06B .
History: IRFR3708PBF | 2SK3101LS | IXFV26N50P | HM75N07K | AFN3400A | WMM07N105C2 | AP60WN4K9I
Keywords - DH140N10D MOSFET datasheet
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History: IRFR3708PBF | 2SK3101LS | IXFV26N50P | HM75N07K | AFN3400A | WMM07N105C2 | AP60WN4K9I



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