All MOSFET. DH240N06LB Datasheet

 

DH240N06LB Datasheet and Replacement


   Type Designator: DH240N06LB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO251
 

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DH240N06LB Datasheet (PDF)

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DH240N06LB

DH240N06L/DH240N06LF/DH240N06LI/DH240N06LE/DH240N06LB/DH240N06LD33A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 24mDS(on) (TYP)standard.13 SI = 33AD2 Features Low on

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