All MOSFET. DH400P06 Datasheet

 

DH400P06 Datasheet and Replacement


   Type Designator: DH400P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 53 nC
   trⓘ - Rise Time: 58.2 nS
   Cossⓘ - Output Capacitance: 194 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO220
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DH400P06 Datasheet (PDF)

 ..1. Size:1213K  cn wxdh
 dh400p06 dh400p06f dh400p06i dh400p06e dh400p06b dh400p06d.pdf pdf_icon

DH400P06

DH400P06/DH400P06F/DH400P06IDH400P06E/DH400P06B/DH400P06D40A 60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -60VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR =32mDS(on) (TYP)RoHS standard.I = -40AD2 Features Fast switching Low on resist

 0.1. Size:969K  cn wxdh
 dh400p06ld dh400p06lb.pdf pdf_icon

DH400P06

DH400P06LD&DH400P06LB-40A -60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV = -60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 22mDS(on) (TYP)standard.I = -40AD2 Features Low on resistance Low gate charge Fast switching

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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