DH400P06E Specs and Replacement

Type Designator: DH400P06E

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58.2 nS

Cossⓘ - Output Capacitance: 194 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO263

DH400P06E substitution

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DH400P06E datasheet

 ..1. Size:1213K  cn wxdh
 dh400p06 dh400p06f dh400p06i dh400p06e dh400p06b dh400p06d.pdf pdf_icon

DH400P06E

DH400P06/DH400P06F/DH400P06I DH400P06E/DH400P06B/DH400P06D 40A 60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used advanced V = -60V DSS trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the R =32m DS(on) (TYP) RoHS standard. I = -40A D 2 Features Fast switching Low on resist... See More ⇒

 6.1. Size:969K  cn wxdh
 dh400p06ld dh400p06lb.pdf pdf_icon

DH400P06E

DH400P06LD&DH400P06LB -40A -60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used V = -60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 22m DS(on) (TYP) standard. I = -40A D 2 Features Low on resistance Low gate charge Fast switching ... See More ⇒

Detailed specifications: DH240N06LB, DH240N06LD, DH240N06LE, DH240N06LF, DH240N06LI, DH400P06, DH400P06B, DH400P06D, SI2302, DH400P06F, DH400P06I, DH400P06LB, DH400P06LD, DH025N08, DH026N06, DH026N06B, DH026N06D

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