FCP25N60N Datasheet and Replacement
Type Designator: FCP25N60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 216 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO220
- MOSFET Cross-Reference Search
FCP25N60N Datasheet (PDF)
fcp25n60n f102.pdf

March 2013FCP25N60N_F102N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mFeatures Description RDS(on) = 107 m (Typ.)@ VGS = 10 V, ID = 12.5 AThe SupreMOS MOSFET is Fairchild Semiconductors next-generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC)employing a deep trench filling process that differentiate it from
fcp25n60n.pdf

November 2013FCP25N60NN-Channel SupreMOS MOSFET600 V, 25 A, 125 mFeatures DescriptionThe SupreMOS MOSFET is Fairchild Semiconductors next RDS(on) = 107 m (Typ.) @ VGS = 10 V, ID = 12.5 Ageneration of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC)employing a deep trench filling process that differentiates it from Low Ef
fcp25n60n.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G
Keywords - FCP25N60N MOSFET datasheet
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History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G



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