FCP25N60N Specs and Replacement
Type Designator: FCP25N60N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 216 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO220
FCP25N60N substitution
- MOSFET ⓘ Cross-Reference Search
FCP25N60N datasheet
fcp25n60n f102.pdf
March 2013 FCP25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 m Features Description RDS(on) = 107 m (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS MOSFET is Fairchild Semiconductor s next- generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiate it from ... See More ⇒
fcp25n60n.pdf
November 2013 FCP25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 m Features Description The SupreMOS MOSFET is Fairchild Semiconductor s next RDS(on) = 107 m (Typ.) @ VGS = 10 V, ID = 12.5 A generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiates it from Low Ef... See More ⇒
fcp25n60n.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQPF8N90C , FQPF9N25C , FQPF9N50CF , FQPF9N90C , FQPF9P25 , FQS4900 , FCI25N60N , FQS4901 , IRF9640 , FQS4903 , FQT13N06 , FQT13N06L , FQT1N60C , HUF76413DKF085 , FQT1N80 , HUF76407DKF085 , FQT3P20 .
Keywords - FCP25N60N MOSFET specs
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