DH026N06F Datasheet and Replacement
Type Designator: DH026N06F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 238 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 255 nS
Cossⓘ - Output Capacitance: 685 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO220F
DH026N06F substitution
DH026N06F Datasheet (PDF)
dh026n06 dh026n06f dh026n06i dh026n06e dh026n06d dh026n06b.pdf
DH026N06/DH026N06F/DH026N06I/DH026N06E/DH026N06D/DH026N06B238A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 2.6mDS(on) (Type)Gstandard.1I = 238A3 S D2 Features Low on res
Datasheet: DH400P06I , DH400P06LB , DH400P06LD , DH025N08 , DH026N06 , DH026N06B , DH026N06D , DH026N06E , P60NF06 , DH026N06I , DH028N03 , DH028N03B , DH028N03D , DH028N03E , DH028N03F , DH028N03I , DH029N08 .
History: DH026N06I | FQP9N08L | SPI07N65C3 | NCE0224
Keywords - DH026N06F MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: DH026N06I | FQP9N08L | SPI07N65C3 | NCE0224
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