All MOSFET. DH028N03 Datasheet

 

DH028N03 Datasheet and Replacement


   Type Designator: DH028N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 145 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 118 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO220
 

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DH028N03 Datasheet (PDF)

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DH028N03

DH028N03/DH028N03F/DH028N03EDH028N03I/DH028N03B/DH028N03D145A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.7mDS(on) (TYP)standard.13 SI = 145AD2 Features Low on resi

Datasheet: DH400P06LD , DH025N08 , DH026N06 , DH026N06B , DH026N06D , DH026N06E , DH026N06F , DH026N06I , RU6888R , DH028N03B , DH028N03D , DH028N03E , DH028N03F , DH028N03I , DH029N08 , DH029N08B , DH029N08D .

History: FMP16N60ES | OSG60R150KF | 2SK1922 | BUK9512-55B | AO4614-30V | SVD50N06T | STU3N62K3

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