DH028N03B Specs and Replacement

Type Designator: DH028N03B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 145 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 118 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: TO251

DH028N03B substitution

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DH028N03B datasheet

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 dh028n03 dh028n03f dh028n03e dh028n03i dh028n03b dh028n03d.pdf pdf_icon

DH028N03B

DH028N03/DH028N03F/DH028N03E DH028N03I/DH028N03B/DH028N03D 145A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2.7m DS(on) (TYP) standard. 1 3 S I = 145A D 2 Features Low on resi... See More ⇒

Detailed specifications: DH025N08, DH026N06, DH026N06B, DH026N06D, DH026N06E, DH026N06F, DH026N06I, DH028N03, IRFB31N20D, DH028N03D, DH028N03E, DH028N03F, DH028N03I, DH029N08, DH029N08B, DH029N08D, DH100P28

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