FQT13N06 PDF and Equivalents Search

 ..1. Size:688K  fairchild semi
 fqt13n06.pdf

January 2002 TM QFET FQT13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has been especially tailore... See More ⇒

 0.1. Size:674K  fairchild semi
 fqt13n06ltf fqt13n06tf.pdf

May 2001 TM QFET FQT13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tail... See More ⇒

 0.2. Size:675K  fairchild semi
 fqt13n06l.pdf

May 2001 TM QFET FQT13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tail... See More ⇒

 0.3. Size:908K  onsemi
 fqt13n06l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒