DH033N04B Specs and Replacement

Type Designator: DH033N04B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 133 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 117 nS

Cossⓘ - Output Capacitance: 406 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO251

DH033N04B substitution

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DH033N04B datasheet

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 dh033n04 dh033n04f dh033n04i dh033n04e dh033n04b dh033n04d.pdf pdf_icon

DH033N04B

DH033N04/DH033N04F/DH033N04I/ DH033N04E/DH033N04B/DH033N04D 120A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.5m DS(on) (TYP) standard. 1 3 S I = 120A D 2 Features Low on res... See More ⇒

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 dh033n04p.pdf pdf_icon

DH033N04B

DH033N04P 96A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.5m DS(on) (TYP) standard. 1 3 S I = 96A D 2 Features Low on resistance Low gate charge Fast switching ... See More ⇒

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 dh033n03 dh033n03f dh033n03i dh033n03e dh033n03b dh033n03d.pdf pdf_icon

DH033N04B

DH033N03/DH033N03F/DH033N03I/ DH033N03E/DH033N03B/DH033N03D 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced mode power vdmosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R =3.3m DS(on) (TYP) G standard. 1 I = 100A D 3 S 2 Features Low switchin... See More ⇒

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 dh033n03r.pdf pdf_icon

DH033N04B

DH033N03R 65A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced mode power vdmosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R =3.4m DS(on) (TYP) G standard. 1 I = 65A 3 S D 2 Features = Low switching loss = Low on resistance = Low gate c... See More ⇒

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Detailed specifications: DH033N03, DH033N03B, DH033N03D, DH033N03E, DH033N03F, DH033N03I, DH033N03R, DH033N04, IRLZ44N, DH033N04D, DH033N04E, DH033N04F, DH033N04I, DH033N04P, DH035N04, DH100P30CF, DH100P30CI

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