All MOSFET. DH033N04P Datasheet

 

DH033N04P Datasheet and Replacement


   Type Designator: DH033N04P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 96 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 117 nS
   Cossⓘ - Output Capacitance: 406 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: DFN5X6-8L
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DH033N04P Datasheet (PDF)

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dh033n04p.pdf pdf_icon

DH033N04P

DH033N04P96A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.5mDS(on) (TYP)standard.13 SI = 96AD2 Features Low on resistance Low gate charge Fast switching

 6.1. Size:1190K  cn wxdh
dh033n04 dh033n04f dh033n04i dh033n04e dh033n04b dh033n04d.pdf pdf_icon

DH033N04P

DH033N04/DH033N04F/DH033N04I/DH033N04E/DH033N04B/DH033N04D120A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.5mDS(on) (TYP)standard.13 SI = 120AD2 Features Low on res

 7.1. Size:1299K  cn wxdh
dh033n03 dh033n03f dh033n03i dh033n03e dh033n03b dh033n03d.pdf pdf_icon

DH033N04P

DH033N03/DH033N03F/DH033N03I/DH033N03E/DH033N03B/DH033N03D100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced mode power vdmosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =3.3mDS(on) (TYP)Gstandard.1I = 100AD3 S2 Features Low switchin

 7.2. Size:696K  cn wxdh
dh033n03r.pdf pdf_icon

DH033N04P

DH033N03R65A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced mode power vdmosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =3.4mDS(on) (TYP)Gstandard.1I = 65A3 S D2 Features= Low switching loss= Low on resistance= Low gate c

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History: VBZE7843 | KPA1716 | IXTH06N220P3HV | 2SK1933 | NCEP0218K | 2SK3503 | CS1060K

Keywords - DH033N04P MOSFET datasheet

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