DH100P35 Specs and Replacement

Type Designator: DH100P35

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO220

DH100P35 substitution

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DH100P35 datasheet

 ..1. Size:1146K  cn wxdh
 dh100p35 dh100p35f dh100p35i dh100p35e dh100p35b dh100p35d.pdf pdf_icon

DH100P35

DH100P35/DH100P35F/DH100P35I/ DH100P35E/DH100P35B/DH100P35D 35A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used VDSS = -100V advanced trench technology and design, provide to excellent Rdson with low gate charge. Which accords RDS =37m (on) (TYP) with the RoHS standard. ID = -35A 2 Features Fast Switching Low ON Resista... See More ⇒

 7.1. Size:1193K  china
 dh100p30.pdf pdf_icon

DH100P35

DH100P30/DH100P30F/DH100P30I/ DH100P30E/DH100P30B/DH100P30D 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used V -100V DSS = advanced trench technology and design, provide to excellent R with low gate charge. Which accords R DSON DS(on) TYP) =35m with the RoHS standard. I = -30A D 2 Features Fast Switching Low ON... See More ⇒

 7.2. Size:1100K  cn wxdh
 dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdf pdf_icon

DH100P35

DH100P30A/DH100P30AF/DH100P30AI DH100P30AE/DH100P30AB/DH100P30AD 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 47m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on r... See More ⇒

 7.3. Size:1238K  cn wxdh
 dh100p30d.pdf pdf_icon

DH100P35

DH100P30D -100V/33m /-35A P-MOSFET Features Key Parameters VDS Low on resistance -100V RDS(on)typ. Low reverse transfer capacitances 33m ID 100% single pulse avalanche energy test -35A Ciss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nC Applications Load switch TO-252 Marking & Packing Information Part # Package ... See More ⇒

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Detailed specifications: DH033N04D, DH033N04E, DH033N04F, DH033N04I, DH033N04P, DH035N04, DH100P30CF, DH100P30CI, IRFB4115, DH100P35B, DH100P35D, DH100P35E, DH100P35F, DH100P35I, DH100P40, DH10H035R, DH10H037R

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