DH116N08 Specs and Replacement
Type Designator: DH116N08
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 49 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 175 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
Package: TO220
DH116N08 substitution
- MOSFET ⓘ Cross-Reference Search
DH116N08 datasheet
dh116n08 dh116n08f dh116n08i dh116n08e dh116n08b dh116n08d.pdf
DH116N08/DH116N08F/DH116N08I/ DH116N08E/DH116N08B/DH116N08D 49A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 11.6m DS(on) (TYP) standard. 1 3 S I = 49A D 2 Features Low on resi... See More ⇒
Detailed specifications: DH100P35B, DH100P35D, DH100P35E, DH100P35F, DH100P35I, DH100P40, DH10H035R, DH10H037R, 2SK3878, DH116N08B, DH116N08D, DH116N08E, DH116N08F, DH116N08I, ZM019N03N, DH045N04, DH045N04B
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