All MOSFET. DH116N08D Datasheet

 

DH116N08D Datasheet and Replacement


   Type Designator: DH116N08D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 117 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 49 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 175 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: TO252
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DH116N08D Datasheet (PDF)

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DH116N08D

DH116N08/DH116N08F/DH116N08I/DH116N08E/DH116N08B/DH116N08D49A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 11.6mDS(on) (TYP)standard.13 SI = 49AD2 Features Low on resi

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History: DH10H037R

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