DH045N04F Datasheet and Replacement
Type Designator: DH045N04F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 52 nC
trⓘ - Rise Time: 113 nS
Cossⓘ - Output Capacitance: 232 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO220F
DH045N04F Datasheet (PDF)
dh045n04 dh045n04f dh045n04i dh045n04e dh045n04b dh045n04d.pdf

DH045N04/DH045N04FDH045N04I/DH045N04E/DH045N04B/DH045N04D90A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.5mDS(on) (TYP)standard.13 SI = 90AD2 Features Low on resist
dh045n04p.pdf

DH045N04P80A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.7mDS(on) (TYP)standard.13 SI = 80AD2 Features Low on resistance Low gate charge Fast switching
dh045n06 dh045n06f dh045n06i dh045n06e dh045n06b dh045n06d.pdf

DH045N06/DH045N06F/DH045N06IDH045N06E/DH045N06B/DH045N06D145A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 4.5mDS(on) (TYP)standard.13 SI = 145AD2 Features Low on resi
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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