DH045N06 Datasheet and Replacement
Type Designator: DH045N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 145 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 136 nS
Cossⓘ - Output Capacitance: 365 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: TO220
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DH045N06 Datasheet (PDF)
dh045n06 dh045n06f dh045n06i dh045n06e dh045n06b dh045n06d.pdf

DH045N06/DH045N06F/DH045N06IDH045N06E/DH045N06B/DH045N06D145A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 4.5mDS(on) (TYP)standard.13 SI = 145AD2 Features Low on resi
dh045n04 dh045n04f dh045n04i dh045n04e dh045n04b dh045n04d.pdf

DH045N04/DH045N04FDH045N04I/DH045N04E/DH045N04B/DH045N04D90A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.5mDS(on) (TYP)standard.13 SI = 90AD2 Features Low on resist
dh045n04p.pdf

DH045N04P80A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.7mDS(on) (TYP)standard.13 SI = 80AD2 Features Low on resistance Low gate charge Fast switching
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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