All MOSFET. DH045N06I Datasheet

 

DH045N06I Datasheet and Replacement


   Type Designator: DH045N06I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 145 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 136 nS
   Cossⓘ - Output Capacitance: 365 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: TO262
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DH045N06I Datasheet (PDF)

 ..1. Size:1385K  cn wxdh
 dh045n06 dh045n06f dh045n06i dh045n06e dh045n06b dh045n06d.pdf pdf_icon

DH045N06I

DH045N06/DH045N06F/DH045N06IDH045N06E/DH045N06B/DH045N06D145A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 4.5mDS(on) (TYP)standard.13 SI = 145AD2 Features Low on resi

 7.1. Size:1215K  cn wxdh
 dh045n04 dh045n04f dh045n04i dh045n04e dh045n04b dh045n04d.pdf pdf_icon

DH045N06I

DH045N04/DH045N04FDH045N04I/DH045N04E/DH045N04B/DH045N04D90A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.5mDS(on) (TYP)standard.13 SI = 90AD2 Features Low on resist

 7.2. Size:774K  cn wxdh
 dh045n04p.pdf pdf_icon

DH045N06I

DH045N04P80A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.7mDS(on) (TYP)standard.13 SI = 80AD2 Features Low on resistance Low gate charge Fast switching

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