DH066N06 Spec and Replacement
Type Designator: DH066N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO220
DH066N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DH066N06 Specs
dh066n06 dh066n06e.pdf
DH066N06/DH066N06E 110A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V DSS advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS R = 5.7m TO-220 DS(on) (TYP) standard. G 1 R = 5.5m TO-263 DS(on) (TYP) 3 S 2 Features I = 110A D ... See More ⇒
dh066n06d.pdf
DH066N06D 100A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.8m G DS(on) (TYP) standard. 1 I = 100A 3 S D 2 Features Low on resistance Low gate charge Fast switching ... See More ⇒
Detailed specifications: DHB035N04 , DHB100N03B13 , DHB16N06 , DHB3205A , DHB3N90 , DHB50N03 , DHB50N06FZC , DHB80N08B22 , RFP50N06 , DH066N06D , DH066N06E , DH072N07 , DH072N07B , DH072N07D , DH072N07E , DH072N07F , DH072N07I .
History: ELM14409AA
Keywords - DH066N06 MOSFET specs
DH066N06 cross reference
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History: ELM14409AA
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