All MOSFET. DHD80N03 Datasheet

 

DHD80N03 Datasheet and Replacement


   Type Designator: DHD80N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 76 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10.2 nS
   Cossⓘ - Output Capacitance: 204 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TO252
 

 DHD80N03 substitution

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DHD80N03 Datasheet (PDF)

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DHD80N03

DHD80N0340A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.2mDS(on) (TYP)standard.13 SI Silicon limit= 76AD2 FeaturesI Package limit 40A=D Low on resis

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DHD80N03

DHD80N0890A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 6.5mDS(on) (Type)Gstandard.1I = 90A3 S D2 Features Fast switching High avalanche current Low on resistanc

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 dh80n08b22 dhf80n08b22 dhi80n08b22 dhe80n08b22 dhb80n08b22 dhd80n08b22.pdf pdf_icon

DHD80N03

DH80N08B22/DHF80N08B22/DHI80N08B22/DHE80N08B22/DHB80N08B22/DHD80N08B2280A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 6.5mDS(on) (Type)Gstandard.1I = 80A3 S D2 Features

Datasheet: DH072N07F , DH072N07I , DH075N08 , DH075N08E , DH081N03 , DH081N03B , DH081N03D , DHD7N65 , IRF1405 , DHD80N08 , DHD9Z24 , DHDSJ11N65 , DHDSJ13N65 , DHDSJ5N65 , DHDSJ7N65 , DHDZ24B31 , DHE029N08 .

History: QM3203S | PMV28UNEA

Keywords - DHD80N03 MOSFET datasheet

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