DHD80N08 Datasheet. Specs and Replacement
Type Designator: DHD80N08 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 292 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO252
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DHD80N08 substitution
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DHD80N08 datasheet
dhd80n08.pdf
DHD80N08 90A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 90A 3 S D 2 Features Fast switching High avalanche current Low on resistanc... See More ⇒
dh80n08b22 dhf80n08b22 dhi80n08b22 dhe80n08b22 dhb80n08b22 dhd80n08b22.pdf
DH80N08B22/DHF80N08B22/DHI80N08B22/ DHE80N08B22/DHB80N08B22/DHD80N08B22 80A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 80A 3 S D 2 Features ... See More ⇒
dhd80n03.pdf
DHD80N03 40A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 5.2m DS(on) (TYP) standard. 1 3 S I Silicon limit = 76A D 2 Features I Package limit 40A = D Low on resis... See More ⇒
Detailed specifications: DH072N07I, DH075N08, DH075N08E, DH081N03, DH081N03B, DH081N03D, DHD7N65, DHD80N03, IRF1405, DHD9Z24, DHDSJ11N65, DHDSJ13N65, DHDSJ5N65, DHDSJ7N65, DHDZ24B31, DHE029N08, DHE035N04
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