DHD80N08 Spec and Replacement
Type Designator: DHD80N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 292 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO252
DHD80N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DHD80N08 Specs
dhd80n08.pdf
DHD80N08 90A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 90A 3 S D 2 Features Fast switching High avalanche current Low on resistanc... See More ⇒
dh80n08b22 dhf80n08b22 dhi80n08b22 dhe80n08b22 dhb80n08b22 dhd80n08b22.pdf
DH80N08B22/DHF80N08B22/DHI80N08B22/ DHE80N08B22/DHB80N08B22/DHD80N08B22 80A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 80A 3 S D 2 Features ... See More ⇒
dhd80n03.pdf
DHD80N03 40A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 5.2m DS(on) (TYP) standard. 1 3 S I Silicon limit = 76A D 2 Features I Package limit 40A = D Low on resis... See More ⇒
Detailed specifications: DH072N07I , DH075N08 , DH075N08E , DH081N03 , DH081N03B , DH081N03D , DHD7N65 , DHD80N03 , IRF1405 , DHD9Z24 , DHDSJ11N65 , DHDSJ13N65 , DHDSJ5N65 , DHDSJ7N65 , DHDZ24B31 , DHE029N08 , DHE035N04 .
Keywords - DHD80N08 MOSFET specs
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