DHFZ24B31 Spec and Replacement
Type Designator: DHFZ24B31
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 92.9 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO220F
DHFZ24B31 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DHFZ24B31 Specs
dhz24b31 dhfz24b31 dhiz24b31 dhez24b31 dhbz24b31 dhdz24b31.pdf
DHZ24B31/DHFZ24B31/DHIZ24B31/ DHEZ24B31/DHBZ24B31/DHDZ24B31 30A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 24m DS(on) (TYP) standard. 1 3 S I = 30A D 2 Features Low on resist... See More ⇒
Detailed specifications: DHE035N04 , DHE100N03B13 , DHE10H035R , DHE10H037R , DHE16N06 , DHE3205A , DHE3N90 , DHFSJ8N65 , IRFP064N , DHI029N08 , DHI035N04 , DHI100N03B13 , DHI10H035R , DHI10H037R , DHI16N06 , DHI3205A , DHI3N90 .
History: DHD9Z24
Keywords - DHFZ24B31 MOSFET specs
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