All MOSFET. FQU13N10L Datasheet

 

FQU13N10L MOSFET. Datasheet pdf. Equivalent

Type Designator: FQU13N10L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: TO251_IPAK

FQU13N10L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU13N10L Datasheet (PDF)

1.1. fqd13n10l fqu13n10l.pdf Size:630K _fairchild_semi

FQU13N10L
FQU13N10L

January 2009 QFET® FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10A, 100V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.7 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology is especially tailored

2.1. fqd13n10 fqu13n10.pdf Size:714K _fairchild_semi

FQU13N10L
FQU13N10L

January 2009 QFET® FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10A, 100V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tailored to

 4.1. fqd13n06l fqu13n06l.pdf Size:733K _fairchild_semi

FQU13N10L
FQU13N10L

January 2009 QFET® FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 11A, 60V, RDS(on) = 0.115? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especially tail

4.2. fqd13n06 fqu13n06.pdf Size:731K _fairchild_semi

FQU13N10L
FQU13N10L

January 2009 QFET® FQD13N06 / FQU13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10A, 60V, RDS(on) = 0.14? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has been especially tailored to

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF630 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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