DHI16N06 Spec and Replacement
Type Designator: DHI16N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 61 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 123 nS
Cossⓘ - Output Capacitance: 607 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO262
DHI16N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DHI16N06 Specs
dh16n06 dhf16n06 dhi16n06 dhe16n06 dhb16n06 dhd16n06.pdf
DH16N06/DHF16N06/DHI16N06/ DHE16N06/DHB16N06/DHD16N06 61A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used by the 2 D VDSS = 60V self-aligned planar technology which reduce the conduction loss, improve switching performance and RDS = 16m (on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. ID = 61A 3... See More ⇒
Detailed specifications: DHE3N90 , DHFSJ8N65 , DHFZ24B31 , DHI029N08 , DHI035N04 , DHI100N03B13 , DHI10H035R , DHI10H037R , IRF840 , DHI3205A , DHI3N90 , DHI50N06FZC , DHI50N15 , DHI8004 , DHI80N08B22 , DHI8290 , DHI85N08 .
History: AP50WN1K0I
Keywords - DHI16N06 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AP50WN1K0I
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