DHD8290 Datasheet. Specs and Replacement
Type Designator: DHD8290 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 386 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO252
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DHD8290 datasheet
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DH8290/DHF8290/DHI8290/ DHE8290/DHB8290/DHD8290 70A 82V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 82V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 9.5m DS(on) (Type) G standard. 1 I = 70A D 3 S 2 Features Fast switching Hig... See More ⇒
Detailed specifications: DHI3205A, DHI3N90, DHI50N06FZC, DHI50N15, DHI8004, DHI80N08B22, DHI8290, DHI85N08, IRLZ44N, DHD90N03B17, DHD50N06FZC, DHD80N08B22, DHD90N045R, DHS025N06, DHS025N06E, DHS025N10, DHS025N10B
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