DHD90N03B17 Datasheet. Specs and Replacement

Type Designator: DHD90N03B17  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36.4 nS

Cossⓘ - Output Capacitance: 248 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO252

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DHD90N03B17 datasheet

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 dhb90n03b17 dhd90n03b17.pdf pdf_icon

DHD90N03B17

DHB90N03B17/DHD90N03B17 90A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 4.0m DS(on) (TYP) standard. 1 3 S I = 90A D 2 Features Low on resistance Low gate charge Fast ... See More ⇒

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 dh90n045r dhf90n045r dhi90n045r dhe90n045r dhb90n045r dhd90n045r.pdf pdf_icon

DHD90N03B17

DH90N045R/DHF90N045R/DHI90N045R DHE90N045R/DHB90N045R/DHD90N045R 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Feature... See More ⇒

Detailed specifications: DHI3N90, DHI50N06FZC, DHI50N15, DHI8004, DHI80N08B22, DHI8290, DHI85N08, DHD8290, IRFB4110, DHD50N06FZC, DHD80N08B22, DHD90N045R, DHS025N06, DHS025N06E, DHS025N10, DHS025N10B, DHS025N10D

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