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DHS025N10E Spec and Replacement


   Type Designator: DHS025N10E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 356 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 352 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 114 nS
   Cossⓘ - Output Capacitance: 1280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO263

 DHS025N10E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHS025N10E Specs

 ..1. Size:1171K  cn wxdh
 dhs025n10 dhs025n10e dhs025n10d dhs025n10b.pdf pdf_icon

DHS025N10E

DHS025N10/DHS025N10E DHS025N10D/DHS025N10B 240A 100V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V =100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.8m DS(on) (TYP) the RoHS standard. 1 3 S I = 240A D 2 Features Low on resistanc... See More ⇒

 5.1. Size:906K  cn wxdh
 dhs025n10u.pdf pdf_icon

DHS025N10E

DHS025N10U 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V =100V DSS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 2.2m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I =180A D 2 Features Low on resistance Low gate ... See More ⇒

 7.1. Size:871K  cn wxdh
 dhs025n06 dhs025n06e.pdf pdf_icon

DHS025N10E

DHS025N06/DHS025N06E 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V =60V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with R =2.5 m TO-220 DS(on) (TYP) G the RoHS standard. 1 R =2.2 m TO-263 DS(on) (TYP) 3 S 2 Features I = ... See More ⇒

 7.2. Size:1358K  cn wxdh
 dhs025n88 dhs025n88f dhs025n88i dhs025n88e dhs025n88d dhs025n88b.pdf pdf_icon

DHS025N10E

DHS025N88/DHS025N88F/DHS025N88I DHS025N88E/DHS025N88D/DHS025N88B 205A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 205A D 2 Feature... See More ⇒

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Detailed specifications: DHD50N06FZC , DHD80N08B22 , DHD90N045R , DHS025N06 , DHS025N06E , DHS025N10 , DHS025N10B , DHS025N10D , 2N7000 , DHS025N10U , DHS025N88 , DHS025N88B , DHS025N88D , E110N04 , E13N50 , E20N50 , E25N10 .

Keywords - DHS025N10E MOSFET specs

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