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DSD190N10L3 Spec and Replacement


   Type Designator: DSD190N10L3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 281 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO252

 DSD190N10L3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DSD190N10L3 Specs

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DSD190N10L3

DSD190N10L3&DSB190N10L3 100V/15m /50A N-MOSFET Features Key Parameters VDS Low on resistance 100V RDS(on)typ. Low reverse transfer capacitances 15m ID 100% single pulse avalanche energy test 50A Ciss@10V 100% VDS test 1076pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 2nC Applications Motor Control and Drive Charge/Discharge for Battery M... See More ⇒

Detailed specifications: DJF420N70T , DSB150N10L3 , DSB190N10L3 , DSD040N08N3A , DSD065N04LA , DSD065N10L3A , DSD090N10L3A , DSD150N10L3 , AO4407 , DSD270N12N3 , DHS110N15 , DHS110N15D , DHS110N15E , DHS110N15F , DHS130N06B , DHS130N06D , DHS160N100B .

History: DSD040N08N3A | SML80B12

Keywords - DSD190N10L3 MOSFET specs

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History: DSD040N08N3A | SML80B12

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