DSD190N10L3 Datasheet. Specs and Replacement

Type Designator: DSD190N10L3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 281 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: TO252

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DSD190N10L3 substitution

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DSD190N10L3 datasheet

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DSD190N10L3

DSD190N10L3&DSB190N10L3 100V/15m /50A N-MOSFET Features Key Parameters VDS Low on resistance 100V RDS(on)typ. Low reverse transfer capacitances 15m ID 100% single pulse avalanche energy test 50A Ciss@10V 100% VDS test 1076pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 2nC Applications Motor Control and Drive Charge/Discharge for Battery M... See More ⇒

Detailed specifications: DJF420N70T, DSB150N10L3, DSB190N10L3, DSD040N08N3A, DSD065N04LA, DSD065N10L3A, DSD090N10L3A, DSD150N10L3, AO4407, DSD270N12N3, DHS110N15, DHS110N15D, DHS110N15E, DHS110N15F, DHS130N06B, DHS130N06D, DHS160N100B

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs