FQU2N100 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQU2N100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 1.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12 nC
Maximum Drain-Source On-State Resistance (Rds): 9 Ohm
Package: TO251_IPAK
FQU2N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQU2N100 Datasheet (PDF)
1.1. fqu2n100tu.pdf 
Size:731K _fairchild_semi
January 2009 QFET® FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.6A, 1000V, RDS(on) = 9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5 pF) This advanced technology has been especially t
1.2. fqd2n100 fqu2n100.pdf Size:731K _fairchild_semi
January 2009 QFET® FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.6A, 1000V, RDS(on) = 9? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5 pF) This advanced technology has been especially tailored to •
5.1. fqu2n50b.pdf Size:731K _fairchild_semi
November 2013 FQU2N50B N-Channel QFET® MOSFET 500 V, 1.6 A, 5.3 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary ID = 0.8 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 6.0 nC) MOSFET technology has been especially tailo
5.2. fqu2n60tu.pdf Size:560K _fairchild_semi
April 2000 TM QFET QFET QFET QFET FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology
5.3. fqd2n80 fqu2n80.pdf Size:724K _fairchild_semi
January 2008 QFET® FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.8A, 800V, RDS(on) = 6.3? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to
5.4. fqu2n90tu.pdf Size:841K _fairchild_semi
January 2009 QFET® FQD2N90 / FQU2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.7A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especi
5.5. fqu2n90.pdf Size:1291K _fairchild_semi
January 2014 FQD2N90 / FQU2N90 N-Channel QFET® MOSFET 900 V, 1.7 A, 7.2 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary ID = 0.85 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 12 nC) MOSFET technology has been especiall
5.6. fqu2n80 fqu2n80tu.pdf Size:724K _fairchild_semi
January 2008 QFET® FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.8A, 800V, RDS(on) = 6.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially
5.7. fqu2n60ctu.pdf Size:762K _fairchild_semi
January 2009 QFET® FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 8.5 nC) DMOS technology. • Low Crss (typical 4.3 pF) This advanced technology has been especially tail
5.8. fqd2n90 fqu2n90.pdf Size:841K _fairchild_semi
January 2009 QFET® FQD2N90 / FQU2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.7A, 900V, RDS(on) = 7.2 ? @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored
5.9. fqd2n60c fqu2n60c.pdf Size:762K _fairchild_semi
January 2009 QFET® FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS(on) = 4.7? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 8.5 nC) DMOS technology. • Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to mini-
5.10. fqu2n50btu.pdf Size:598K _fairchild_semi
May 2000 TM QFET QFET QFET QFET FQD2N50B / FQU2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.6A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology
Datasheet: FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , IRFZ34N , FQU2N60C , FDMC8030 , FQU2N90TU_AM002 , FQU3N50C , FQU4N50TU_WS , FQU5N40 , FDMC7582 , FQU5N60C .
