DHS110N15D Datasheet. Specs and Replacement

Type Designator: DHS110N15D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO252

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DHS110N15D substitution

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DHS110N15D datasheet

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DHS110N15D

DHS110N15D 85A 150V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets. used 2 D V = 150V DSS advanced trench process technology design, provided excellent Rdson and low gate charge. Which accords with the R = 13m DS(on) (Type) G RoHS standard. 1 I = 85A 3 S D 2 Features Low on resistance Low gate charge High ava... See More ⇒

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DHS110N15D

DHS110N15/DHS110N15E 90A 150V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET utilizes V = 150V DSS 2 D advanced Split Gate Trench technology, which provides R = 9.7m 220 DS(on) (Type) excellent Rdson and low Gate charge at the same time. G R = 9.4m 263 DS(on) (Type) Which accords with the RoHS standard. 1 I = 90A ... See More ⇒

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DHS110N15D

DHS110N15F 150V/9.5m /52A N-MOSFET Features Key Parameters Low on resistance VDS 150V Low reverse transfer capacitances RDS(on)typ. 9.5m 100% single pulse avalanche energy test ID 52A 100% VDS test VTH 3V Pb-Free plating / Halogen-Free / RoHS compliant Ciss@10V 3863pF Qgd 5nC Applications Power switching applications DC-DC converters Full bridge ... See More ⇒

Detailed specifications: DSD040N08N3A, DSD065N04LA, DSD065N10L3A, DSD090N10L3A, DSD150N10L3, DSD190N10L3, DSD270N12N3, DHS110N15, IRFP250, DHS110N15E, DHS110N15F, DHS130N06B, DHS130N06D, DHS160N100B, DHS160N100D, DHS180N10L, DHS180N10LB

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