DHS110N15E Spec and Replacement
Type Designator: DHS110N15E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8.3 nS
Cossⓘ - Output Capacitance: 241 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO263
DHS110N15E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DHS110N15E Specs
dhs110n15 dhs110n15e.pdf
DHS110N15/DHS110N15E 90A 150V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET utilizes V = 150V DSS 2 D advanced Split Gate Trench technology, which provides R = 9.7m 220 DS(on) (Type) excellent Rdson and low Gate charge at the same time. G R = 9.4m 263 DS(on) (Type) Which accords with the RoHS standard. 1 I = 90A ... See More ⇒
dhs110n15d.pdf
DHS110N15D 85A 150V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets. used 2 D V = 150V DSS advanced trench process technology design, provided excellent Rdson and low gate charge. Which accords with the R = 13m DS(on) (Type) G RoHS standard. 1 I = 85A 3 S D 2 Features Low on resistance Low gate charge High ava... See More ⇒
dhs110n15f.pdf
DHS110N15F 150V/9.5m /52A N-MOSFET Features Key Parameters Low on resistance VDS 150V Low reverse transfer capacitances RDS(on)typ. 9.5m 100% single pulse avalanche energy test ID 52A 100% VDS test VTH 3V Pb-Free plating / Halogen-Free / RoHS compliant Ciss@10V 3863pF Qgd 5nC Applications Power switching applications DC-DC converters Full bridge ... See More ⇒
Detailed specifications: DSD065N04LA , DSD065N10L3A , DSD090N10L3A , DSD150N10L3 , DSD190N10L3 , DSD270N12N3 , DHS110N15 , DHS110N15D , IRF1407 , DHS110N15F , DHS130N06B , DHS130N06D , DHS160N100B , DHS160N100D , DHS180N10L , DHS180N10LB , DHS180N10LD .
History: AP4N3R6P
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